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1

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Failure mechanisms of low-voltage trench power MOSFETs under repetitive avalanche conditions

Bach, Karl Heinz, Asam, Michael, Kanert, Werner

Year:

2012

Language:

english

File:

PDF, 1.65 MB

english, 2012

2

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Observations of copper (Cu) transport in through-silicon vias (TSV) structure by electrical characterization for its reliability evaluation

Chan, Jiawei Marvin, Tan, Chuan Seng, Lee, Kheng Chooi, Cheng, Xu, Kanert, Werner

Year:

2017

Language:

english

File:

PDF, 1.54 MB

english, 2017

3

[IEEE 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) - Orlando, FL, USA (2017.5.30-2017.6.2)] 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) - Reliability Evaluation of Copper (Cu) Through-Silicon Vias (TSV) Barrier and Dielectric Liner by Electrical Characterization and Physical Failure Analysis (PFA)

Chan, Jiawei Marvin, Cheng, Xu, Lee, Kheng Chooi, Kanert, Werner, Tan, Chuan Seng

Year:

2017

Language:

english

File:

PDF, 3.70 MB

english, 2017

4

The vertical concept of power MOSFETs

C Tolksdorf, C Fink, J Schulze, S Sedlmaier, W Hansch, W Werner, W Kanert, I Eisele

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 341 KB

english, 2002

5

Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure

Martin Knaipp, Werner Kanert, Siegfried Selberherr

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 340 KB

english, 2000

6

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Vertical power-MOSFETs with local channel doping

Fink, C., Schulze, J., Eisele, I., Hansch, W., Werner, W., Kanert, W.

Year:

2000

Language:

english

File:

PDF, 380 KB

english, 2000

7

Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices

Michael Goroll, Werner Kanert, Reinhard Pufall, Stefano Aresu

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 450 KB

english, 2007

8

[IEEE 2016 IEEE 18th Electronics Packaging Technology Conference (EPTC) - Singapore, Singapore (2016.11.30-2016.12.3)] 2016 IEEE 18th Electronics Packaging Technology Conference (EPTC) - Reliability evaluation of copper (Cu) through-silicon via (TSV) barrier and dielectric liner by electrical characterization

Chan, Jiawei Marvin, Cheng, Xu, Lee, Kheng Chooi, Kanert, Werner, Tan, Chuan Seng

Year:

2016

Language:

english

File:

PDF, 509 KB

english, 2016

9

Reducing of R On in Vertical Power-MOSFETs due to Local Channel Doping

Fink, Christoph, Schulze, Jörg, Eisele, Ignaz, Hansch, Walter, Werner, Wolfgang, Kanert, Werner

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 338 KB

english, 2001

10

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Reliability challenges for power devices under active cycling

Year:

2009

Language:

english

File:

PDF, 469 KB

english, 2009

11

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - SPT 170-a smart power technology combining robust high-voltage devices with precision analogue performance

Wiesinger, K., Kanert, W., Glenz, E., Krischke, N., Nelle, P., Peri, H., Pfirsch, F., Schwetlick, W., Wagner, C., Werner, W.M.

Year:

1995

Language:

english

File:

PDF, 301 KB

english, 1995

12

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - HCI vs. BTI? - Neither one's out

Schlunder, Christian, Aresu, Stefano, Georgakos, Georg, Kanert, Werner, Reisinger, Hans, Hofmann, Karl, Gustin, Wolfgang

Year:

2012

Language:

english

File:

PDF, 474 KB

english, 2012

13

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Product reliability at low failure rates: Wrong expectations and real limitations

Year:

2012

Language:

english

File:

PDF, 5.17 MB

english, 2012

14

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Investigation of chip-package interaction-looking for more acceleration in product qualification tests

Kanert, Werner, Pufall, Reinhard

Year:

2009

Language:

english

File:

PDF, 639 KB

english, 2009

15

[IEEE Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) - Linz, Austria (2011.04.18-2011.04.20)] 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Reliability of semiconductor devices - The need for simulation

Year:

2011

Language:

english

File:

PDF, 1.19 MB

english, 2011

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